Numerical modeling of silicon photodiodes for high-accuracy applications, Part II. Interpreting oxide-bias experiments
نویسندگان
چکیده
منابع مشابه
Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments
The semiconductor device modeling program PC-1D and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate oxide-bias self-calibration experiments on three different types of silicon photodiodes. It is shown that these simulations can be used to determine photodiode characteristics, includi...
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The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bi...
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The semiconductor device modeling program PC-ID and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate the interpolation of high-accuracy internal quantum-efficiency calibrations in the spectral region between 450 nm and 850 nm. Convenient interpolation formulae that depend only upon wa...
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Results are presented for modeling of the shape of the internal quantum efficiency (IQE) versus wavelength for silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission optical trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a ...
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ژورنال
عنوان ژورنال: Journal of Research of the National Institute of Standards and Technology
سال: 1991
ISSN: 1044-677X
DOI: 10.6028/jres.096.024